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. 2014 Nov 19;4:7103. doi: 10.1038/srep07103

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(a) Depiction of broad-band NIR Si Schottky photodetector. Au nanoislands are formed on n-type Si substrate by rapid thermal annealing of a thin Au film. Si substrate is used as the bottom contact; and Au nanoislands together with the AZO capping layer constitute the top contact. (b) Illustration of optoelectronic characterization setup. The photocurrent is deduced from the voltage on the series resistor. The polarity for dark current vs. voltage (I–V) measurements is also as shown in the diagram.