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. 2014 Dec 8;4:7354. doi: 10.1038/srep07354

Figure 5. Substrate temperature during film's growth for the M, C1 and C2 devices.

Figure 5

For the M and C1 devices, after completing the SZO:Cr growth, the substrate temperature was reduced at a rate of 18 °C/min to RT at the base pressure.