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. 2014 Dec 8;4:7354. doi: 10.1038/srep07354

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(a) Schematic of bipolar mode RS mechanism. Redox chemical reaction between oxygen vacancies and ions in the vicinity of the SRO/SZO:Cr interface plays a key role in determining the observed RS properties in case of bipolar RS mode. (b) Schematic of unipolar mode RS mechanism for the M and C1 devices where Ti out-diffusion occurs. After the electro-forming process, metallic filaments are created in the SZO:Cr layer. The observed unipolar resistive switching is caused by the repetition process of the rupture/re-creation of metallic filaments. Out-diffused Ti in the SZO:Cr contributes to the formation of metallic filaments.