FIG. 2.

Experimental setup. (A) An imaging bench with an edge-on Si-strip PCD. The detector is capable of readout at multiple detector threshold bins. The edge-on detection geometry is illustrated in (B), where photons are incident along the z direction, and readout is performed in the x direction, with bronze septa separating each Si wafer in the y direction. (C) Diagram of individual Si wafers (not to scale) illustrating the large detector thickness (3.6 mm) in the z direction for increased interaction probability and fine (50 μm) pixel pitch in the x direction. Individual wafers are aligned with the divergent beam, so the tilt angles η and ν are nonzero and different for each wafer depending on its position. (D) An example CT reconstruction of a wrist phantom obtained with the PCD detector (70 kVp, 162 mAs).