Table 1. Anode performance comparison of recent works about relevant Si/C structure.
| Structure | Method | Si mass percent | Rct @ cycles [Ω] | Current density [A g−1] | Capacity @ cycles [mA h g−1] | Capacity retention |
|---|---|---|---|---|---|---|
| Hollow CNS/Si/Al2O3 (Ours) | PECVD | 62.5% | 51 @ 0 | 1 | 1560 @ 100 | 84.8% |
| 60 @ 100 | ||||||
| Si@void@Carbon tubes25 | Electrospinning | 47% | - | 1 | 870 @ 200 | 90% |
| Si@void@C26 | Chemical Etching | 71% | ~1000 @ 0 | 4.2 | 1300 @ 1000 | 74% |
| ~150 @ 10 | ||||||
| Si@void@C27 | Chemical Etching | 48% | - | 0.2 | 1625 @ 100a) | 69% |
| Si@void@C28 | Electroless Etching | 63% | - | 0.2 | 1500 @ 50 | 79% |
| SiNW@void@ graphitic tubes29 | CVD | 70% | - | 4.2 | 1100 @ 1000 | 63% |
| Si@Graphene30 | Electrostatic Attraction | 80.1% | 28 @ 0 | 0.1 | 1205 @ 150 | 73% |
| 75 @ 150 | ||||||
| Si/B4C/Graphite31 | Ball Milling | 57% | 100 @ 1 | 0.63 | 680 @ 200 | 78.5% |
| Aligned CNT/Si sheet32 | CVD | 60–70% | - | 0.1 | 1494 @ 45 | 94% |
| Rolled-Up C/Si/C33 | Sputtering | 40% | - | 0.5 | 1000 @ 300 | 1 |
| Twisted MWCNT/Si fiber34 | E-beam Evaporation | 38.1% | 185 @ 0 | 1 | 1000 @ 50 | 61% |
| 68 @ 30 | ||||||
| Si/AlGL35 | Molecular Layer Deposition | 1 | 140 @ 0 | 0.1 Cb) | 900 @ 150 | 55% |
a)Capacity was calculated based on Si mass;
b)C rate was not mentioned in the reference.