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. 2014 Nov 29;15(1):709–713. doi: 10.1021/nl504256y

Figure 6.

Figure 6

Electronic properties of WSe2 atomic layers. (a) Optical microscope image of a monolayer WSe2 transistor; scale bar is 2 μm. (b) IsdVsd output characteristics of the WSe2 transistor shown in panel a. (c) IsdVg transfer characteristics of the device shown in (a) at Vsd = 0, 1, 2, 3, and 4 V. (d) Summary of the mobility values obtained in WSe2 field effect transistors with different number of atomic layers, demonstrating a mobility range of 10–350 cm2 V–1 s–1 and maximum on/off ratio over 108.