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. 2015 Jan 20;5:7884. doi: 10.1038/srep07884

Figure 2. Variation in the IDG−VGS transfer characteristics for the (a) IGZO-TFT and (b) IGO-TFT with a lapse of stress time for 104 s under the DBS of 20 V.

Figure 2

A VDS of 10 V was applied for the measurements. The negative shift in VTH for the IGZO-TFT was 1.7 V after the DBS, contrary to the IGO-TFT, which showed almost no shift in VTH.