Table 1.
mPOFBG Central Wavelength |
BLS Output Power, dBm Pin |
Devices Insertion Losses, dB LDevices |
CWDM Insertion Loss, dB LCWDM |
mPOFBG Insertion Losses, dB LmPOFBG−Si(Note 1) |
Photodetector Sensitivity, dBm POut (Note 2) |
---|---|---|---|---|---|
λ1 = 1525 nm | −17.3 | 30.2 | 1.8 | 15.1 | −66.6 |
λ2 = 1567 nm | −15.8 | 30.2 | 1.8 | 14.6 | −66.6 |
Notes: 1. Including Rλ mPOF k; 2. Considering the amplified gain of 70 dB, the noise-equivalent power (NEP) and the bandwidth of the amplified InGaAs detector of and 12 kHz, respectively.