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. 2014 Nov 25;290(4):2086–2098. doi: 10.1074/jbc.M114.613620

FIGURE 6.

FIGURE 6.

Internal gate curvature of cryo-EM structures A, curvature analysis of residues 656 to 712, in the S6-TRP domain, where the S6 segment is shown in purple and the TRP domain in cyan, as defined by Liao et al. (10). B, bottom view of the S6-TRP domain helix of the APO-TRPV1 structure (PDBid: 3J5P), (C) CAP-TRPV1 (PDBid: 3J5R) and (D) RTX-DkTx TRPV1 structures (PDBid: 3J5Q). Curvatures over 30° are highlighted in green and over 50° are shown in red. E, measurements of the bending angle in the S6-TRP domain of the cryo-microscopy structures were calculated using the VMD Bendix package (48).

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