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. 2014 Dec;15(12):3521–3528. doi: 10.1016/j.orgel.2014.09.038

Fig. 4.

Fig. 4

Transfer curves showing source–drain current (black traces), and gate leakage current (olive). Hole-enhanced devices shown in the column on the left were fabricated with Au source–drain electrodes, VSD = −10 V in all cases. Electron-enhanced devices with Al source–drain electrodes are shown on the right, with VSD = 10 V.