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. 2015 Jan 13;6:6028. doi: 10.1038/ncomms7028

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Temperature dependence of the resistance as a function of gate voltage for (a) (001)—and (b) (110)-oriented LaAlO₃/SrTiO₃ interfaces, respectively. In panels (c) and (d) we show the superconducting transitions in linear scale, for zero applied voltage, for (001) and (110) interfaces, respectively. (e) Superconducting T_C (filled symbols) and sheet resistance (open symbols) of (001)—and (110)-interfaces plotted against the gate voltage. (f) Hall carrier density of (001)- (circles) and (110)- (triangles) interfaces. Solid lines correspond to the carrier density obtained from the analysis of the capacitance.