Table 2.
C 1s (eV) | N 1s (eV) | |||||||
material | d (nm) | C–C | C–Na | pnic | plic | subs | N atomic % | references |
(C59N)2 | 0.71 | 285.2 | — | — | — | 400.72 | 1.6 | [132] |
SW | 1–1.6 | 284.5 | — | 398.5 | — | 400.6 | 0.3 | [119] |
SW | <2 | 284.8 | 286.3, 288.3 | 399.8 | — | 401.8 | 3 | [121] |
SW | 1–1.8 | 284.7b | 287 | 397.9 | — | 401.1 | 2 | [120] |
SW | 1.1–1.2 | — | — | 398.6 | — | 400.5 | 1.1 | [133] |
SW | 0.9–1.8 | — | — | 397.6 | — | 400.5 | 1 | [124] |
SW | 0.8–1.0 | 284.5 | 285.8, 287 | 398.4 | 400.9 | — | 3.2 | [134] |
S/DW | 0.8–2 | 284.5 | — | 398.6 | — | 400.6 | 0.2 | [117] |
DW | — | 284.5 | 285.5 | 398.3 | — | 400.2 | 3 | [135] |
DW | 1.6–3.2 | 284.3 | — | 398.0 | — | 401.3 | 1 | [136] |
FW | 1–5 | 284.5 | 287 | 398.6 | — | 400.88 | 6 | [116] |
MW | 15–80 | 284.5 | 285.5 | 398.4 | — | 400.2 | 8 | [137] |
MW | 10–40 | 284.7 | 285.7 ± 0.1 | 398.5 | — | 400.8 | 4 | [138] |
MW | 30–80 | 284.5 | — | 398.6 | — | 400.5 | 5 | [139] |
MW | 30–60 | 284.5 | — | 398.2 | — | 400.5 | 25.7 | [140] |
MW | 20–60 | 284.1 | 285.9 | 398.2 | 400.2 | 401.1 | 5.2 | [141] |
SLG/Cu | ∞ | 284.8 | 285.8, 287.5 | 398.2 | 400.1 | 401.7 | 8.9 | [126] c |
SLG/Au/Ni(111)d | ∞ | 284.4 | — | 398.4 | 400.3 | 401.3 | 0.48 | [127] |
SLG/Cu | ∞ | 284.6 | 285.8 | 398.6 | — | 400.6 | 0.25 | [142] |
SLG/SiO2 | ∞ | 284.5 | — | 398.0 | 398.9 | 400 | 0.4 | [143] e |
FLG | ∞ | 284.6f | — | 398.45 | 399.45 | 400.92 | 12.8 | [67] |
graphite | ∞ | — | — | 398.5 | 399.9 | 401.1 | 2.7 | [144] |
aWhen two values are listed, the lower binding energy component has been assigned to sp2 C–N and the higher to sp3 C–N bonds. bShifted from 284.5 eV upon doping. cPredominant presence of graphitic nitrogen subsequently verified by transmission electron microscopy [145–146]. dQuasi-freestanding graphene via Au intercalation as in [69–70]. eMost values not explicitly reported, estimated from spectrum graph. A slight C 1s downshift and broadening is observed in the doped sample. fSynchrotron-based scanning X-ray photoelectron microscopy measurements on ion-implanted few-layer graphene samples. The pristine sample was measured at 284.47 eV.