Figure 3.

(a) The channel current (I_DS) responses of a SGGT without any modification on the graphene gate to additions of H₂O₂ with different concentrations measured at the fixed voltages of V_G = 0.7 V and V_DS = 0.05 V. Inset: the transfer curves of the SGGT measured in pure PBS and 1 mM H₂O₂ PBS solutions. (b) The channel current responses of a SGGT with PtNP-modified graphene gate to additions of H₂O₂ with different concentrations measured at the fixed voltages of V_G = 0.7 V and V_DS = 0.05 V. Inset: the transfer curves of the device measured in PBS and 1 mM H₂O₂ PBS solutions. (c) Effective gate voltage change (ΔV_G^eff) versus H₂O₂ concentration ([H₂O₂]) for the SGGTs with or without PtNPs on graphene gate electrodes.