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| Laser Element | Semiconductor Laser Diode |
| Ga-Al-AS: Gallium-Aluminum-arsenide | |
| MDL & | MDL-2001 model |
| Manufacturer | Matsushita Electric Corporation, Tokyo, Japan |
| Wavelength | 830nm±15nm |
| Output | 1000mW±20% |
| Mode | continuous wave mode |
| contact mode with positive pressure | |
| Irradiation area | diameter of 14mm : actual area 1.5 cm2 |
| Irradiation time | 30sec/point |
| Energy density | 20.1 J/cm2/point |
| Power supply | 100VAC,50–60Hz |
