. 2014 Nov 19;290(3):1522–1535. doi: 10.1074/jbc.M114.603902

TABLE 1.

Parameters for inhibition of BfAChE and EeAChE by Elec410 (italics) and Fab410 (plain)

	BfAChE^a^,^b	EeAChE
IC₅₀ Elec410 (nm)	10.9 ± 0.9	0.47 ± 0.18^a^,^b
IC₅₀ Elec410 (nm)	(8.1–13.7)	(−1.8–2.76)
IC₅₀ Fab410 (nm)	33.4 ± 5.0	0.42 ± 0.03^b^,^c
IC₅₀ Fab410 (nm)	(11.8–54.9)	(0.33–0.50)
Residual activity Elec410 (%)	28.1 ± 0.9	4.75 ± 0.55^b^,^c
Residual activity Elec410 (%)	(25.2–31.0)	(−2.24–11.74)
Residual activity Fab410 (%)	13.7 ± 1.9	4.50 ± 0.62^b^,^c
Residual activity Fab410 (%)	(5.4–22.1)	(2.52–6.48)

^a This study.

^b Means ± S.E. from three (Fab410/BfAChE), four (IgG410/BfAChE and Fab410/EeAChE), and two (Elec410/EeAChE) independent experiments performed with duplicates. The 95% confidence intervals are provided in parentheses (p values <0.05).

^c From Ref. 32 with modification.