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. 2015 Feb 4;15(3):1780–1785. doi: 10.1021/nl5044743

Figure 4.

Figure 4

(a) Comparison of the relative change of resistivity and mobility of SiO2 or Al2O3 passivated suspended NWs under tensile strain. The values are extracted at a bias voltage of VDS = 0.5 V and a gate voltage of Vgate = 1.5 V. (b) Absolute value of the resistivity of an as-grown Si NW and a SiO2 coated NW in the TSD.