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. 2015 Mar 19;5:9256. doi: 10.1038/srep09256

Table 1. Device performances.

  Planar Si Texture Si Nanocone Si
IRS (mA) 0.3 2.4 0.9
IF (A) 3.79 3.58 4.12
Ideality factor 1.52 1.61 1.57
Rectifying ratio 15152.5 1499.5 4367.3
Surface enhancement 100% N/A 133.9%
Voc (mV) 584 586 583
Jsc (mA/cm2) 32.05 32.86 36.25
Cell efficiency (%) 14.5 15.0 16.3