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. 2015 Feb 3;15(2):3513–3539. doi: 10.3390/s150203513

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© 2015 by the authors; licensee MDPI, Basel, Switzerland.

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).

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Figure 1. — SNSPD devices on silica substrate consisting of (aa–ad) p = 264 nm quarter plasmon-wavelength periodic and (ba–bd) 792 nm three-quarter plasmon-wavelength periodic pattern of 4 nm thick and 100 nm wide NbN stripes integrated with (aa,ba) nanocavity array (NCAI-SNSPD); (ab,bb) nanocavity deflector array (NCDAI-SNSPD), (ac,bc) nanocavity double deflector array (NCDDAI-SNSPD); and (ad,bd) nano-cavity trench array (NCTAI-SNSPD); (c,d) The methodology of polar (φ) and azimuthal (γ) angle variation during p- and s-polarized infrared (λ = 1550 nm) light illumination of plasmonic structure integrated SNSPDs from silica substrate side. Specific presented illumination configurations are: (c) P-orientation and (d) S-orientation; (e) Plane cross-section of a single unit cell used for near-field study, above and below boundary pair in pictures and Media, respectively.