Table 2.

Required system constant, K_s, for various combinations of design parameters at 905 nm.

Variant Number	Photodetector	Rio [A/W]	M	F	NEPm [ $\text{pW}/\sqrt{\text{Hz}}$ ]	ξ0	Kb [m2·nm·sr]	Required Ks [W·m3]
1	Silicon APD	0.62	100	4	0.11	0.5	6.17 × 10−9	16.33
2	Silicon APD	0.62	100	4	0.11	0.25	6.17 × 10−9	32.65
3	Silicon APD	0.62	100	4	0.11	0.1	6.17 × 10−9	81.58
4	Silicon PIN	0.62	1	1	10.49	0.5	6.17 × 10−9	852.3
5	Silicon PIN	0.62	1	1	10.49	0.25	6.17 × 10−9	1705
6	Silicon PIN	0.62	1	1	10.49	0.1	6.17 × 10−9	4261