Table 3.

Required system constant, K_s, for various combinations of design parameters at 1064 nm.

Variant Number	Photodetector	Rio [A/W]	M	F	NEPm [ $\text{pW}/\sqrt{\text{Hz}}$ ]	ξ0	Kb [m2·nm·sr]	Required Ks [W·m3]
7	Silicon APD	0.34	100	4	0.19	0.5	6.17 × 10−9	28.95
8	Silicon APD	0.34	100	4	0.19	0.25	6.17 × 10−9	57.88
9	Silicon APD	0.34	100	4	0.19	0.1	6.17 × 10−9	144.7
10	Silicon PIN	0.34	1	1	19.12	0.5	6.17 × 10−9	1513
11	Silicon PIN	0.34	1	1	19.12	0.25	6.17 × 10−9	3027
12	Silicon PIN	0.34	1	1	19.12	0.1	6.17 × 10−9	7568