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. 2015 Mar 24;6:6564. doi: 10.1038/ncomms7564

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(a,b) The p–n MoS₂ FET was used as a phototransistor for photodetection at V_G=60 V. The time-resolved photoresponse at V_G=60 V and V_D=1 V illustrates a PC ON/OFF ratio of ~100. (c,d) The MoS₂ p–n junction was used as a solar cell for light harvesting at V_G=0 V. The current density as a function of V_D illustrates the energy-conversion properties. The area of red shading in d indicates P_max.