Table 1.

Summary of deposition conditions of TiO ₂ films

Base pressure	1.4 ×10−3 Pa
Working pressures	3 Pa at a substrate bias of 0 V,
	5 Pa at a substrate bias of 0 V,
	3 Pa at a substrate bias of −50 V
Deposition time	5 Hrs for each sample
RF Power	150 W
Argon flow rate	30 sccm
Oxygen flow rate	10 sccm
Target to substrate distance	70 mm
Diameter of silicon (100) substrate	25.4 mm
Diameter of the titanium target	60 mm