Figure 13. Cavity affection for stimulated emission on Si QDs embedded in SiOx prepared by using irradiation of electron beam for 15min, in which the Purcell cavity (Q factor: ~2000) is fabricated by PLE process in the device related to Fig. 1.
Official websites use .gov
A
.gov website belongs to an official
government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you've safely
connected to the .gov website. Share sensitive
information only on official, secure websites.