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. 2015 Apr 24;5:9932. doi: 10.1038/srep09932

Figure 6. TEM images of different silicon nanocrystals prepared in different impurity solid atoms after irradiation of electron beam for 30min.

Figure 6

(a)TEM image of Si–Yb nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30min, in which the film structure is still kept. (b)TEM image of Si–Ge nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30min, in which the film structure has been broken due to stronger condensed ability of Ge atoms. (c)TEM image of Si–Er nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30min, in which the film structure has been broken because of stronger condensed ability of Er atoms.