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I-V hysteresis characteristics of a Cu/Ta2O5/W memory device. (a) Bipolar I-V hysteresis characteristics of a Cu/Ta2O5/W memory device. The memory device performs under a small operating voltage of ±1 V. Current compliance is 100 μA. (b) I-V hysteresis characteristics with a low current compliance of 5 pA are also obtained [17].
