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. 2015 Apr 18;10:188. doi: 10.1186/s11671-015-0880-9

Figure 15.

Figure 15

I-V characteristics of (a) Al/Cu/TaOx/W and (b) Al/Cu/TiO2/TaOx/W structures. The memory device shows excellent uniformity at LRS after introducing a Ti nanolayer in the Cu/TaOx interface [29].