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. 2015 Apr 18;10:188. doi: 10.1186/s11671-015-0880-9

Figure 23.

Figure 23

Schematic view of a crossbar structured for gap-type atomic switch. (a) A positive bias applied on the Pt nanowire makes the device in HRS by forming a 1-nm gap between the two electrodes. (b) A conducting Ag bridge is formed inside the gap by electrochemical reaction with the help of negative bias on the Pt nanowire [38].