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. 2015 Apr 18;10:188. doi: 10.1186/s11671-015-0880-9

Figure 5.

Figure 5

I-V and corresponding R-V hysteresis characteristics of an Al/Cu/Ge0.4Se0.6/W resistive memory device. (a) I-V hysteresis characteristics of an Al/Cu/Ge0.4Se0.6/W resistive memory device. The device size was 0.2 μm. (b) Corresponding R-V hysteresis characteristics of the device [33].