Table 1.

CBRAM material and deposition methods

Device structure (TE/switching material/BE)	Deposition methods			Device size (μm)
	TE	Switching material	BE
Ag/Ag33Ge20Se47/Ni [10]	-	Evaporation	-	40, 75
Ag/Ag-GeSe/Pt [11]	-	RF sputtering	Thermal evaporation	2 to 50
Al/Cu/Ge0.5Se0.5/W [12]	Thermal	Electron beam	Sputtering	0.2 to 8.0
Ag or Cu/GeS/W [13]	PVD	PVD	CVD	0.18 to 5
Ag/Sb:GeS2/W [14]	-	RF PVD	-	0.2
Cu/Ta2O5/Pt [16]	-	RF sputtering	-	-
Cu/Ta2O5/W [17]	Thermal evaporator	E-beam evaporation	Sputtering	0.2 to 8.0
Cu/Cu:SiO2/W [18]	-	E-beam evaporation	CVD	0.35 to 5
Ag/a-Si/SiGe/W [22]	-	CVD	Sputtering	0.05
Ag/Si3N4/Pt [23]	RF sputtering	PECVD	RF sputtering	10
Cu/Cu-Te/GdOx/W [24]	Sputtering	Sputtering	-	0.02, 0.05
Cu/Ta/TaSiOy/Ru [27]	-	PECVD	-	0.05 to 1
Al/Cu/Ti/TaOx/W [29]	Thermal	Electron beam	Sputtering	0.15
Cu-Te/Al2O3/Si [30]	Co-sputtering	ALD	-	-
Al/TiN/Cu/TiW/Al2O3/W [31]	-	ALD	Sputtering	0.09