Table 3.

Performances of CBRAM devices

Device structure (TE/switching material)/BE	Operation current (μA)	Retention time (s)	P/E endurance (cycles)
Ag/10% Sb-GeS2/W [14]	100	105 at 150°C	>105
Cu/Cu-doped SiO2/W [18]	5	105 at 1 μA	107
Cu/GeOx/W [20]	50	>106 at 85°C	>103
Cu/Cu-Te/GdOx/W [24]	110	3.6 × 105 at 130°C	~107
Al/Cu/Ti/TaOx/W [29]	0.1 to 300	104	104
Al/TiN/Cu/TiW/Al2O3/W [31]	25	6 × 102 at 125°C	106