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. 2015 Apr 13;112(17):5280–5285. doi: 10.1073/pnas.1418049112

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Fig. 4. — Influence of the pyramid sharpness on the calculated LDOS enhancement and extraction efficiency (i.e., far-field radiated power/total emitted power), which is averaged over 470∼540 nm. The pyramid sharpness is characterized by the ratio h/h₀, where h₀ is the height of the perfect pyramid structure, whereas h is that of the truncated pyramid structure. (Inset) TEM image of the apex of the InGaN/GaN pyramid structure without a silver film. (Scale bar: 20 nm.) Two dotted lines indicate the QD height. For the structure with h/h₀ = 0.8, similar to the structure in the TEM image, the calculated LDOS enhancement is ∼18.