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. 2015 May 5;5:10123. doi: 10.1038/srep10123

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(a) The asymmetric I-V characteristics of Al/PCMO structure. (b) The asymmetric conductance response of Al/PCMO memristive synapse in identical pulse scheme. (c) By optimizing nitrogen concentration during TiN_x deposition. (d) Symmetric I-V characteristics of AlO_x/TiN_x/PCMO structure. (e) The symmetric conductance response of AlOx/TiNx/PCMO memristive synapse in identical pulse scheme. (f) A Photograph of a memristive synapse array in 8 inch wafer. (g) A SEM view image of the cross-point memristive synapse array. (h) A TEM view image of the cross-point memristive synapse array.