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. 2015 Apr 10;2(Pt 3):371–383. doi: 10.1107/S205225251500010X

Figure 4.

Figure 4

Flat-field images of high-Z sensors bump-bonded to 3 × 2 Medipix3 readout chips, taken using an X-ray source at 40 keV with an Mo target for sensors of (a) CdTe and (b) GaAs (Pennicard, Smoljanin et al., 2014 ▶). The scales indicate the relative gain. (c) An image of a Ge sensor bump-bonded to a Medipix3 readout chip, taken using an X-ray source at 40 keV with an Ag target (Pennicard, Struth et al., 2014 ▶). (Copyright SISSA Medialab Srl. Reproduced by permission of IOP Publishing. All rights reserved.)