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. 2015 May 7;5:10022. doi: 10.1038/srep10022

Figure 5.

Figure 5

Current noise PSD of the thermal-baked albumen memory as a function of voltage in (a) LRS and (b) HRS. Current noise PSD of the dry-cured devices as a function of voltage in (c) LRS and (d) HRS. Noise PSDs of (e) thermal-baked and (f) dry-cured devices in HRS and LRS with an applied voltage of 0.1 V.