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. 2015 May 7;6:6991. doi: 10.1038/ncomms7991

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(a) Transfer curves of monolayer (red) and trilayer (blue) ReS₂ FET devices. V_ds is fixed to 100 mV. The on/off ratio is ∼10⁷ for the monolayer device and 10⁷ for the seven-layer device. The subthreshold swings are 310 mV per decade (monolayer) and 100 mV per decade (trilayer), respectively. Inset: optical image of a typical monolayer ReS₂ FET device. Scale bar, 5 μm. (b) I_ds–V_ds curves of a monolayer ReS₂ FET at different V_bg, with linear dependence indicating the ohmic contact. (c) The dependence of device mobility on the number of layers. In general, the mobility increases monotonically with the number of layers with some scattering.