Figure 3. Field-effect mobility modulation via conducting channel wrinkling.

(a) Optical micrograph of single-crystal FET in its planar and wrinkled configurations with top source (S) and drain (D) electrodes. Length of the scale bar is 100 μm. (b–d) Drain current I_D versus gate voltage V_G corresponding to three different devices in their planar configuration and while undergoing wrinkling. Corresponding mobility versus gate voltage is shown. For experimental details on individual devices tested, see Supplementary Table 1.