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. 2015 Apr 24;112(19):E2419–E2428. doi: 10.1073/pnas.1502000112

Fig. 1.

Fig. 1.

Schematic view of a FET (A) and a molecularly controlled semiconductor resistor (MOCSER) (B). The conduction between the source and drain through the body of the substrate (through the conductive channel) is controlled by the gate electrode potential in the first case and by the SAM polarization in the second case. The dielectric layer, which helps to maintain distinct logic stages of the FET, is provided by the alkyl chains in the MOCSER.