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. 2015 May 28;5:10428. doi: 10.1038/srep10428

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(a) Carrier density and mobility of films as a function of x_f measured by Hall effect. (b) Temperature dependences of electron density (N_e, blue line) and mobility (μ_e, red line) of n-type film with x_f = 0.48. (c,d) UPS spectrum of n-type (Sn_0.5Pb_0.5)S film. (d) shows a magnified view near E_F. (e) Projected DOS of (Sn_0.5Pb_0.5)S calculated by DFT with GGA functionals. (f) I-V characteristics of n-(Sn_0.5Pb_0.5)S/p-Si pn heterojunction. Inset shows the device structure.

Inline graphic — (a) Carrier density and mobility of films as a function of x_f measured by Hall effect. (b) Temperature dependences of electron density (N_e, blue line) and mobility (μ_e, red line) of n-type film with x_f = 0.48. (c,d) UPS spectrum of n-type (Sn_0.5Pb_0.5)S film. (d) shows a magnified view near E_F. (e) Projected DOS of (Sn_0.5Pb_0.5)S calculated by DFT with GGA functionals. (f) I-V characteristics of n-(Sn_0.5Pb_0.5)S/p-Si pn heterojunction. Inset shows the device structure.