Skip to main content
. 2015 May 28;5:10428. doi: 10.1038/srep10428

Figure 4. Formation enthalpies ΔHf of intrinsic defects calculated at S-poor limit.

Figure 4

Calculated ΔHf for (a) pure SnS and (b) (Sn16Pb16)S32 models as a function of EF at S-poor limit. The values in the figures represent the charge states of the defects in the DFT calculations. The black dashed lines represent the equilibrium EF (EF,e) calculated self-consistently.