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. 2015 Jun 1;5:10699. doi: 10.1038/srep10699

Figure 3. Transport properties of SL-WS2 FETs on SiO2 substrate.

Figure 3

(a) Output characteristics (IdsVds) of SL-WS2 FET at different back-gate voltages ranging from –30 V to +40 V in steps of 10 V. (b) Transfer characteristics (IdsVbg) of the SL-WS2 FET on SiO2 substrate with Al/Au contacts. ON/OFF ratio of the device is ~107 at room temperature.