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. 2015 Jun 1;5:10699. doi: 10.1038/srep10699

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(a) Transfer characteristics (I_ds–V_bg) of the mechanically exfoliated SL-WS₂ FET on CVD-grown h-BN film at 300 K. (b) Transfer characteristics (I_ds–V_bg) of the mechanically exfoliated SL-WS₂ FET enclosed by h-BN at 300 K. ON/OFF ratio of the device is ~10⁷. (c) Transfer characteristics (I_ds–V_bg) of the mechanically exfoliated SL-WS₂ FET enclosed by h-BN (device #2) at 300 K. (d) Transfer characteristics (I_ds–V_bg) of the mechanically exfoliated SL-WS₂ FET enclosed by h-BN films at different temperatures. (e) Output current as function of temperature for different values of the back-gate voltage. (f) Electron field-effect mobility of SL-WS₂ FETs on different substrates at various temperatures.