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. 2015 Jun 2;10:249. doi: 10.1186/s11671-015-0958-4

Fig. 3.

Fig. 3

Cross-sectional TEM images of S-FinFET along different axis. a The cross-sectional views of fabricated S-Fin and conventional Fin in the inset with multi-layer HKMG stack. b The cross-sectional views of HKMG S-FinFETs with L G of 27 nm and L G of 14 nm