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. Author manuscript; available in PMC: 2016 Oct 1.
Published in final edited form as: Mater Sci Semicond Process. 2015 Oct;38:278–289. doi: 10.1016/j.mssp.2015.04.001

Table 5.

Materials and materials parameters at 300K used for the energy band diagram simulations.

Material\Parameters Work Function, φ (eV) Electron Affinity, χ (eV) Band Gap Energy, Eg (eV) Intrinsic Carrier Concentration, ni (carriers/cm-3) Relative Dielectric Constant Reference
Tungsten, W 4.5 N/A N/A N/A N/A [49,50]
Silicon, Si * 4.05 1.125 1.41×1010 11.7 [49,50]
Zinc Oxide, ZnO * 4.6 3.44 1×1016 8.75 [49,50]
*

Depends on whether n-type or p-type