Table 5.
Materials and materials parameters at 300K used for the energy band diagram simulations.
Material\Parameters | Work Function, φ (eV) | Electron Affinity, χ (eV) | Band Gap Energy, Eg (eV) | Intrinsic Carrier Concentration, ni (carriers/cm-3) | Relative Dielectric Constant | Reference |
---|---|---|---|---|---|---|
Tungsten, W | 4.5 | N/A | N/A | N/A | N/A | [49,50] |
Silicon, Si | * | 4.05 | 1.125 | 1.41×1010 | 11.7 | [49,50] |
Zinc Oxide, ZnO | * | 4.6 | 3.44 | 1×1016 | 8.75 | [49,50] |
Depends on whether n-type or p-type