Table 1. Device parameters.
Barrier thickness (nm) | Spin filter efficiency | Ic0 (μA) | EJ (meV) | IcRn (mV) |
---|---|---|---|---|
1.5 | <30% | 820 | 1,700 | 1.0 |
1.7 | <30% | 280 | 570 | 0.9 |
1.8 | 60% | 120 | 250 | 0.7 |
3.0 | 90% | 30 | 60 | 0.1 |
Spin filter efficiency has been determined at 4.2 K. Ic0 has been estimated from the fits of the switching current distributions and Rn from the IV curves.