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. 2015 Jun 9;6:7376. doi: 10.1038/ncomms8376

Table 1. Device parameters.

Barrier thickness (nm) Spin filter efficiency Ic0 (μA) EJ (meV) IcRn (mV)
1.5 <30% 820 1,700 1.0
1.7 <30% 280 570 0.9
1.8 60% 120 250 0.7
3.0 90% 30 60 0.1

Spin filter efficiency has been determined at 4.2 K. Ic0 has been estimated from the fits of the switching current distributions and Rn from the IV curves.