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. 2015 Jun 22;5:11466. doi: 10.1038/srep11466

Figure 4.

Figure 4

(a)VB-PES spectra of hyperdoped Si samples and reference undoped Si(100). (b) S dopants introduce electron states or impurity band 0.7 eV above EVBM of reference Si. S-dopant states or impurity band located in band gap of Si facilitates generation of charge carriers that participate in absorption of two or more lower-energy photons.