TABLE III.
Indium Air Concentrations for Two Copper Indium Gallium Diselenide (CIGS) and One Amorphous Silicon (a-Si) Photovoltaic Companies
Type | Job/Task or Area | Reported Controls | Data Source | Year | Indium Source | Dur. (min) | Air Vol. (L) | Mass (μg) | Air Conc. (mg/m3) | RL (μg) |
---|---|---|---|---|---|---|---|---|---|---|
COMPANY 3 (CIGS) | ||||||||||
P | Clean sputter chamber, grinding | LEV hood for parts cleaning | NIOSH | 2010 | ITO | 122 | 374.4 | 260 | 0.69 | 0.3 |
P | Clean sputter chamber, grinding | HEPA vacuum | NIOSH | 2010 | ITO | 291 | 859.6 | 62 | 0.072 | 0.3 |
COMPANY 4 (CIGS) | ||||||||||
P | Operate roll coater | Comp. | 2008 | CIG | 420 | 858 | NP | < 0.012 | NP | |
P | Operate roll coater | Comp. | 2008 | CIG | 384 | 753 | NP | < 0.013 | NP | |
P | Clean chamber, scraping, Scotch-Brite pads | Comp. | 2008 | CIG | 430 | 867 | NP | < 0.012 | NP | |
P | Clean chamber, scraping, Scotch-Brite pads | Comp. | 2008 | CIG | 435 | 948 | NP | < 0.011 | NP | |
A | Near chamber | Comp. | 2008 | CIG | 455 | 946 | NP | < 0.013A | NP | |
A | Computer work station | Comp. | 2008 | CIG | 472 | 927 | NP | < 0.021 | NP | |
P | Clean chamber, scraping, chiseling | Tent enclosure, HEPA vacuum | Comp. | 2010 | CIG | 270 | 447 | 22 | 0.049 | 0.06 |
P | Clean chamber, scraping, chiseling | Tent enclosure, HEPA vacuum | Comp. | 2010 | CIG | 270 | 432 | 26 | 0.061 | 0.06 |
A | Inside chamber tent enclosure during cleaning | Comp. | 2010 | CIG | 380 | 652 | 3.9 | 0.006 | 0.06 | |
A | Perimeter walkway | Comp. | 2010 | CIG | 375 | 619 | 0.16 | 0.00026 | 0.06 | |
A | Entrance to tent enclosure | Comp. | 2010 | CIG | 315 | 538 | 0.12 | 0.00022 | 0.06 | |
A | Behind chamber | Comp. | 2010 | CIG | 375 | 608 | 0.073 | 0.00012 | 0.06 | |
A | Near slitter and conveyor | Comp. | 2010 | CIG | 487 | 931 | 0.74 | 0.0008 | 0.06 | |
A | Between conveyors | Comp. | 2010 | CIG | 487 | 980 | 0.43 | 0.0004 | 0.06 | |
A | Below slitter tool | Comp. | 2010 | CIG | 487 | 969 | 0.62 | 0.0006 | 0.06 | |
A | Workstation | Comp. | 2010 | CIG | 466 | 936 | 0.28 | 0.0003 | 0.06 | |
COMPANY 5 (a-Si) | ||||||||||
P | Clean sputter chamber, hand sanded target with abrasive screen, hand scraper on shields | Non-HEPA vacuum | Comp. | 2011 | ITO | 31 | 62.3 | 9.8 | 0.16 | 0.1 |
P | “Sandblast” 3 shields | Canopy hood, dust collection system vented into blasting room | Comp. | 2011 | ITO | 231 | 464.5 | 110 | 0.24 | 0.1 |
P | Clean sputter chamber, hand scraper on inside surfaces, wire brush to clean target | Non-HEPA vacuum | Comp. | 2011 | ITO | 23 | 47.3 | 15 | 0.32 | 0.1 |
P | Clean evaporation chamber, hand scraper on inside surfaces and on a screen | Non-HEPA vacuum | Comp. | 2011 | ITO | 97 | 178 | 970 | 5.4 | 0.1 |
P | Clean same evaporation chamber as above | Hand scraper attached to HEPA vacuum | Comp. | 2011 | ITO | 53 | 108.8 | 31 | 0.28 | 0.1 |
Computational error in company data corrected.
A = area sample; a-Si = amorphous silicon; CIG = copper indium gallium; Comp. = Company; Conc. = concentration; Dur. = duration; ITO = indium tin oxide; LEV = local exhaust ventilation; NP = information not provided; P = personal sample; RL = reporting Limit; Vol. = volume.