Figure 4. Electromechanical behaviour of a MoS₂ device under compressive and tensile strain.

I–V_b characteristics of the MoS₂ device at different applied forces under compressive (a) and tensile (b) strain when applying forces at locations denoted in upper insets resulting in compressive/tensile strain as shown schematically in lower insets. (c) The relation of loading location to tensile/compressive strain, where experimental observations indicate that the MoS₂ monolayer undergoes tensile strain when force is applied near the edges (yellow circles) versus compressive strain when applied at the centre (green crosses). (d) The derived change of the Schottky barrier height as a function of strain at a bias voltage of 1 V.