Table 3. Experimental interatomic spacings.

SADP(a) (Å)	SADP(b) (Å)	Δd (Å)	bt8-Si I41/a	st12-Si P43212	t32-Si P-421c-Si	t32*-Si P43212	Si-VIII (Å)	Unidentified
10.80		0.3						?
7.90		0.2						?
5.70		0.1		010
	5.07	0.07						? (Pair)
4.80		0.06				200
4.62		↓			200
4.57	4.59		101
	4.38	0.05		101
4.00		0.04		110
3.88		↓					3.872
	3.70							?
	3.39			111				?
3.30	3.32	0.03			220	220
3.28		↓	200
3.25								?
3.16								?
3.09	3.09							?
3.04	3.04							?
2.99					310	310
2.95								?
	2.90			012
	2.85			200
	2.83
2.73	2.73	0.02					2.728
	2.67	↓	211	201		320	2.673
	2.54			210	320
2.50	2.50						2.500
	2.35		220	211	040	400	2.281
	2.14		301	013	420
	2.01		103	220
1.98		0.01						?
1.96	1.96	↓		113
1.92	1.92			221		430
	1.82				510	510	1.825
1.78				023
1.75			231	311	520	520
	1.72		132 Or 213	222
1.69	1.69			004 Or 123
1.64			400		530	440
1.60				312		530
1.58			004				1.580
	1.53		411	321		610

SADP, selected area electron diffraction pattern.

Interatomic spacings of the tetragonal Si phases observed in our ultrafast laser-induced microexplosion experiments are presented in bold (see Figs 3 and 4). The error values are related to the accuracy of measurements of the positions of the diffraction spots in the SADPs as performed in our case. We present previously determined experimental d-spacings for the tetragonal phase Si-VIII in a separate column36. The d-spacings of the diffraction spots observed in our experiments that fit the Si-VIII phase are indicated in bold. The remaining d-spacing, marked in italic, is given for completeness only. The question marks in the last column indicate those measured d-spacings that cannot be attributed to any known phase of silicon.