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. 2014 Dec 23;9:692. doi: 10.1186/1556-276X-9-692

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© Panja et al.; licensee Springer. 2014

This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.

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I - V curves a low CC of 30 μA. Typical I-V characteristics under a CC of (a) 30 μA with a thickness of the Al₂O₃ layer of 5 nm and (b) at a lowest CC of 0.1 μA. Forming-free I-V characteristics are observed. A high resistance ratio of >10⁴ at a read voltage of 0.2 V is also obtained. The voltage sweeping direction is shown by arrows 1 to 4.