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. 2014 Dec 23;9:692. doi: 10.1186/1556-276X-9-692

Figure 2.

Figure 2

Current-voltage characteristics of the Cu pillars. I-V characteristics of arbitrarily measured 50 devices with device size of (a) 8 × 8 μm2 under a high CC of 70 mA and of (b) 0.4 × 0.4 μm2 under a CC of 10 mA. The smallest size devices have largest failure of the Cu pillars, due to the Joule heating. The thickness of the Al2O3 layer is 20 nm.